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FD200R12KE3HOSA1

FD200R12KE3HOSA1

IGBT MODULE 1200V 1050W

FD200R12KE3HOSA1

FD200R12KE3HOSA1

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Part No :

FD200R12KE3HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 1200V 1050W
Catalog
Transistors - IGBTs - Modules
Availability
477147 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FD200R12KE3HOSA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Single Chopper
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):-
Power - Max:1050 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:14 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
FD200R12KE3HOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FD200R12KE3HOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FD200R12KE3HOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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  • FD200R12KE3HOSA1 Price
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