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FS75R12W2T4B11BOMA1

FS75R12W2T4B11BOMA1

IGBT MOD 1200V 107A 375W

FS75R12W2T4B11BOMA1

FS75R12W2T4B11BOMA1

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Part No :

FS75R12W2T4B11BOMA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 107A 375W
Catalog
Transistors - IGBTs - Modules
Availability
286928 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FS75R12W2T4B11BOMA1 PDF
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Full Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):107 A
Power - Max:375 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 75A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.3 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
FS75R12W2T4B11BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FS75R12W2T4B11BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FS75R12W2T4B11BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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