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DDB6U75N16W1RBOMA1

DDB6U75N16W1RBOMA1

IGBT MOD 1200V 69A 335W

DDB6U75N16W1RBOMA1

DDB6U75N16W1RBOMA1

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Part No :

DDB6U75N16W1RBOMA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 69A 335W
Catalog
Transistors - IGBTs - Modules
Availability
116811 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
DDB6U75N16W1RBOMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):69 A
Power - Max:335 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 50A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:2.8 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
DDB6U75N16W1RBOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including DDB6U75N16W1RBOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DDB6U75N16W1RBOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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