MOSFET N-CH 60V 32A/120A PWRFLAT
Type | Description |
---|---|
Series: | STripFET™ F7 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta), 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.4mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 79.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4825 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 4.8W (Ta), 166W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (5x6) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2N7228Microsemi |
MOSFET N-CH 500V 12A TO254AA |
|
UPA1763G(0)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
AOI4TL60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO251A |
|
IRFC4768EDIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
IXTD3N60P-2JWickmann / Littelfuse |
MOSFET N-CH 600V 3A DIE |
|
PSMN2R1-60CSJNexperia |
MOSFET N-CH 60V DPAK |
|
IXTV02N250SWickmann / Littelfuse |
MOSFET N-CH 2500V 200MA PLUS220 |
|
TPCA8A02-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 34A 8SOP |
|
NP88N075KUE-E2-AYRenesas Electronics America |
TRANSISTOR |
|
IRFC9024NBIR (Infineon Technologies) |
MOSFET 55V 11A DIE |
|
NP60N03SUG(1)-E1-AYRenesas Electronics America |
TRANSISTOR |
|
FCPF380N60-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.2A TO220F-3 |
|
APT80SM120BMicrosemi |
SICFET N-CH 1200V 80A TO247 |