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IPB80N06S2H5AUMA1

IPB80N06S2H5AUMA1

IC MOSFET N-CH TO263-3

IPB80N06S2H5AUMA1

IPB80N06S2H5AUMA1

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Part No :

IPB80N06S2H5AUMA1

Manufacturer
IR (Infineon Technologies)
Description
IC MOSFET N-CH TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
329332 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IPB80N06S2H5AUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80N06S2H5AUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80N06S2H5AUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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