RES SMD 147 OHM 1% 1/4W 1206
MOSFET P-CH 100V 18A TO254AA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 4W (Ta), 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-254AA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NP70N10KUF-E2-AYRenesas Electronics America |
TRANSISTOR |
|
IRLC110VBIR (Infineon Technologies) |
MOSFET 100V DIE |
|
RQA0009TXDQS#H1Renesas Electronics America |
MOSFET N-CH 16V 3.2A UPAK |
|
R6530ENZC17ROHM Semiconductor |
MOSFET N-CH 650V 30A TO3 |
|
NVTGS3455T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 3.5A 6-TSOP |
|
TPCC8066-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8TSON |
|
CEN1235 TRCentral Semiconductor |
DIODE LOW LEAKAGE 12V SMD |
|
RJK6002DPD-WS#J2Renesas Electronics America |
MOSFET N-CH 600V 2A MP3A |
|
AON6362PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8DFN |
|
DMN2400UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH SOT23 |
|
JAN2N6849Microsemi |
MOSFET P-CH 100V 6.5A TO39 |
|
V30410-T1-GE3Vishay / Siliconix |
MOSFET N-CH SMD |
|
IRFC120NBIR (Infineon Technologies) |
MOSFET 100V 9.4A DIE |