MOSFET N-CH 200V 175A SP4
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 175A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 12mOhm @ 87.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 224 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 13700 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 694W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SP4 |
Package / Case: | SP4 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APTM100DA33T1GMicrosemi |
MOSFET N-CH 1000V 23A SP1 |
|
JANTXV2N6800Microsemi |
MOSFET N-CH 400V 3A TO205AF |
|
FDJ129P_F077Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.2A SC75-6 FLMP |
|
UPA1770G-E1-ARenesas Electronics America |
TRANSISTOR |
|
RJK0656DPB-WS#J5Renesas Electronics America |
IGBT |
|
PH5030ALS,115NXP Semiconductors |
MOSFET N-CH 30V TRENCH LFPACK |
|
64-4123PBFIR (Infineon Technologies) |
MOSFET N-CH 100V DPAK |
|
IXFD40N30Q-72Wickmann / Littelfuse |
MOSFET N-CHANNEL 300V DIE |
|
IXFT26N50Q TRWickmann / Littelfuse |
MOSFET N-CH 500V 26A TO268 |
|
IXTH21N50QWickmann / Littelfuse |
MOSFET N-CH 500V 21A TO247AD |
|
JAN2N6796UMicrosemi |
MOSFET N-CH 100V 8A 18ULCC |
|
IXFM10N90Wickmann / Littelfuse |
MOSFET N-CH 900V 10A TO204AA |
|
2SK3483(0)-Z-E1-AZRenesas Electronics America |
TRANSISTOR |