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FQE10N20LCTU

FQE10N20LCTU

MOSFET N-CH 200V 4A TO126-3

FQE10N20LCTU

FQE10N20LCTU

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Part No :

FQE10N20LCTU

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 4A TO126-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
409040 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FQE10N20LCTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
FET Feature:-
Power Dissipation (Max):12.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-126-3
Package / Case:TO-225AA, TO-126-3
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