DIODE LOW LEAKAGE 12V SMD
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Last Time Buy |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
V30392-T1-GE3Vishay / Siliconix |
MOSFET N-CH SMD |
|
R6530KNZC17ROHM Semiconductor |
MOSFET N-CH 650V 30A TO3 |
|
JAN2N6784Microsemi |
MOSFET N-CH 200V 2.25A TO39 |
|
FDS9435ANBAD008Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC |
|
MCB60I1200TZWickmann / Littelfuse |
1200V 90A SIC POWER MOSFET |
|
NTMFS4C054NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22.5A/80A 5DFN |
|
JANTX2N6766Microsemi |
MOSFET N-CH 200V 30A TO3 |
|
IRLML6402TRPBF-1IR (Infineon Technologies) |
MOSFET P-CH 20V 3.7A SOT23 |
|
FCPF600N60ZL1-F154Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A TO220F |
|
NTMFS4C705NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V SO8FL |
|
RJK03M2DPA-WS#J5ARenesas Electronics America |
IGBT |
|
STU5NK50ZSTMicroelectronics |
MOSFET |
|
IRFC4468EDIR (Infineon Technologies) |
MOSFET N-CH WAFER |