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NVD5867NLT4G-TB01

NVD5867NLT4G-TB01

MOSFET N-CH 60V 6A/22A DPAK-3

NVD5867NLT4G-TB01

NVD5867NLT4G-TB01

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Part No :

NVD5867NLT4G-TB01

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 6A/22A DPAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
398939 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
NVD5867NLT4G-TB01 PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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