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JAN2N6766T1

JAN2N6766T1

MOSFET N-CH 200V 30A TO254AA

JAN2N6766T1

JAN2N6766T1

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Part No :

JAN2N6766T1

Manufacturer
Microsemi
Description
MOSFET N-CH 200V 30A TO254AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
028302 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
JAN2N6766T1 PDF
Type Description
Series:Military, MIL-PRF-19500/543
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):4W (Ta), 150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-254AA
Package / Case:TO-254-3, TO-254AA (Straight Leads)
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