MOSFET N-CH 34V 75A TO220AB
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 34 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 82 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4533 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HAF1004-90STR-ERenesas Electronics America |
MOSFET P-CHANNEL 60V 5A DPAK |
|
AOTF12N60FD_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V TO220F |
|
APTM50DAM38TGMicrosemi |
MOSFET N-CH 500V 90A SP4 |
|
IRFC3006EBIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
STW35N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V TO247 |
|
AUXDKG4PC40S-EIR (Infineon Technologies) |
IC DISCRETE |
|
AUXTALR3915IR (Infineon Technologies) |
IC DISCRETE |
|
2N6782UMicrosemi |
MOSFET N-CH 100V 3.5A 18ULCC |
|
V50383-E3Vishay / Siliconix |
MOSFET N-CH 60V TO-247AC 80MIL |
|
UPA2793GR(01)-E2-AYRenesas Electronics America |
TRANSISTOR |
|
APTML60U12R020T1AGMicrosemi |
MOSFET N-CH 600V 45A SP1 |
|
CDM2208-800FPCentral Semiconductor |
MOSFET N-CH 800V 8A TO220 |
|
JANSR2N7269UMicrosemi |
MOSFET N-CH 200V 26A U1 |