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TP65H150G4LSG

TP65H150G4LSG

GAN FET N-CH 650V PQFN

TP65H150G4LSG

TP65H150G4LSG

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Part No :

TP65H150G4LSG

Manufacturer
Transphorm
Description
GAN FET N-CH 650V PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
298129 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
TP65H150G4LSG is available at GangBo-ic.com, Please review product page below for detailed information, including TP65H150G4LSG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TP65H150G4LSG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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  • TP65H150G4LSG Price
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  • TP65H150G4LSG Datasheet
  • TP65H150G4LSG Application
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  • TP65H150G4LSG Image
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  • TP65H150G4LSG Features
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