MOSFET N-CH 30V 3.6A DIE
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 78mOhm @ 1.8A, 2.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 4.5 V |
Vgs (Max): | 12V |
Input Capacitance (Ciss) (Max) @ Vds: | 590 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
R6024ENZM12C8ROHM Semiconductor |
MOSFET N-CH 600V 24A TO3 |
|
UPA2396AT1P-E1-A#YJ1Renesas Electronics America |
MOSFET |
|
64-9150PBFIR (Infineon Technologies) |
MOSFET N-CH 40V DIRECTFETL8 |
|
2SK3367(01)-Z-E1-AZRenesas Electronics America |
TRANSISTOR |
|
AOTF14N50_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |
|
PHL5830AL,115NXP Semiconductors |
MOSFET N-CH 30V 8HVSON |
|
ES6M2T2CRROHM Semiconductor |
MOSFET/SCHOTTKY NCH SOT-563 |
|
MSC750SMA170B4Roving Networks / Microchip Technology |
TRANS SJT 1700V TO247-4 |
|
JANTX2N6898Microsemi |
MOSFET P-CHANNEL 100V 25A TO3 |
|
JANTX2N6764Microsemi |
MOSFET N-CH 100V 38A TO3 |
|
NP55N055SDG-E2-AYRenesas Electronics America |
TRANSISTOR |
|
TPCA8021-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 27A 8SOP |
|
AOTF16N50_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH TO220 |