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IRF6100PBF

IRF6100PBF

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Part No :

IRF6100PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 20V 5.1A 4FLIPFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
038003 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 17 - Apr 21 2025
PDF
IRF6100PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1230 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-FlipFet™
Package / Case:4-FlipFet™
IRF6100PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6100PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6100PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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