N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHB11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A D2PAK |
|
MMIX1F230N20TWickmann / Littelfuse |
MOSFET N-CH 200V 168A 24SMPD |
|
UPA2714GR-E1-ARochester Electronics |
P-CHANNEL SWITCHING POWER MOSFET |
|
ZXMN2F30FHQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.9A SOT23-3 |
|
DMN1017UCP3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 7.5A X3DSN1010-3 |
|
UPA2815T1S-E2-ATRenesas Electronics America |
MOSFET P-CH 30V 21A 8HWSON |
|
TK28V65W5,LQToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
NTB110N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 30A D2PAK-3 |
|
2SJ143-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSZ0908NDXTMA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IXFH80N65X2-4Wickmann / Littelfuse |
MOSFET N-CH 650V 80A TO247-4L |
|
IPC302N08N3X2SA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
RDD020N50TLROHM Semiconductor |
MOSFET N-CH 500V 2A CPT3 |