MOSFET P-CH 20V 800MA VESM
Type | Description |
---|---|
Series: | U-MOSVI |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: | 390mOhm @ 800mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.6 nC @ 4.5 V |
Vgs (Max): | +6V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 100 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | VESM |
Package / Case: | SOT-723 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
2SJ602-Z-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
SQJ401EP-T2_GE3Vishay / Siliconix |
MOSFET P-CH 12V 32A PPAK SO-8 |
![]() |
DMT15H017LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 101V~250V POWERDI5 |
![]() |
NTMFS5C426NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
![]() |
NDH8502PRochester Electronics |
P-CHANNEL MOSFET |
![]() |
RFB18N10CSVMRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTMFS0D7N03CGT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 59A/409A 5DFN |
![]() |
STU25N10F7STMicroelectronics |
MOSFET N-CH 100V 25A IPAK |
![]() |
TK10A50W,S5XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
![]() |
IPP070N06NGINRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NVBG060N090SC1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 5.8/44A D2PAK-7 |
![]() |
NTMTS0D4N04CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 79.8A 8DFNW |
![]() |
HAT1125HWS-ERochester Electronics |
P-CHANNEL POWER MOSFET |