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PMPB08R6ENX

PMPB08R6ENX

MOSFET N-CH 30V 11A DFN2020M-6

PMPB08R6ENX

PMPB08R6ENX

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Part No :

PMPB08R6ENX

Manufacturer
Nexperia
Description
MOSFET N-CH 30V 11A DFN2020M-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
856485 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:TrenchMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.9W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020M-6
Package / Case:6-UDFN Exposed Pad
PMPB08R6ENX is available at GangBo-ic.com, Please review product page below for detailed information, including PMPB08R6ENX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PMPB08R6ENX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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