N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APTM120UM70FAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 171A SP6 |
|
FCH029N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
2SJ451ZK-TL-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
IPI80404S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0331DPB-01#J0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
UPA2702TP-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVD4856NT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 13.3A/89A DPAK |
|
RJK0397DPA-0G#J7ARochester Electronics |
POWER TRANSISTOR, MOSFET |
|
IPW65R090CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
YJL05N04A-F2-0000HF |
N-CH MOSFET 40V 5A SOT-23-3L |
|
SIJ150DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK |
|
IPI60R165CPXKSA1IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
IXTA180N10T7-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO263-7 |