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IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

MOSFET N-CH 600V 10A LSON-8

IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

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Part No :

IGLD60R190D1AUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 10A LSON-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
716071 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:CoolGaN™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:157 pF @ 400 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-LSON-8-1
Package / Case:8-LDFN Exposed Pad
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