MOSFET N-CH 40V 120A DPAK
Type | Description |
---|---|
Series: | U-MOSIX-H |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 1.9mOhm @ 60A, 6V |
Vgs(th) (Max) @ Id: | 3V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 103 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5500 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 180W (Tc) |
Operating Temperature: | 175°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK+ |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HUF76122P3Rochester Electronics |
HUF76122P3 |
|
SIPC03N60C3X1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
2SJ403Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RFM10N50Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVTFWS9D6P04M8LTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 13A/64A 8WDFN |
|
NDCTR4065ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A SMD |
|
FDMA3027PZ-F130Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDPF39N20TLDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 39A TO220F |
|
SQR40030ER_GE3Vishay / Siliconix |
MOSFET N-CH 40V TO252 REVERSE |
|
STL19N60M6STMicroelectronics |
MOSFET N-CH 600V 11A PWRFLAT HV |
|
BTS247ZE3062ANTMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3113-Z-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BUK6C2R1-55C,118-NXRochester Electronics |
PFET, 228A I(D), 55V, 0.0037OHM, |