CAP CER SMD
MOSFET N-CH 20V 11.6A DFN2020M-6
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 11.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 11.6A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1696 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.9W (Ta), 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN2020M-6 |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STTFS015N10MCLSanyo Semiconductor/ON Semiconductor |
- |
|
NVTFS014P04M8LTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 11.3A/49A 8WDFN |
|
STD110N02RT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 32A/110A DPAK |
|
HTNFET-DCHoneywell Aerospace |
MOSFET N-CH 55V 8-DIP |
|
NDCTR05120ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1200V 5A SMD |
|
AUIRFP46310ZRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
PSMN6R9-100YSFQNexperia |
PSMN6R9-100YSF/SOT669/LFPAK |
|
2SK3055(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPCP8J01(TE85L,F,MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 32V 5.5A PS-8 |
|
HAT2019R-EL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJS4D7N03HTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.6A 6PQFN |
|
NVMFS6H836NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 16A/77A 5DFN |
|
RSD045P05TLROHM Semiconductor |
MOSFET P-CH 45V CPT3 |