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NVMFS6H836NLWFT1G

NVMFS6H836NLWFT1G

MOSFET N-CH 80V 16A/77A 5DFN

NVMFS6H836NLWFT1G

NVMFS6H836NLWFT1G

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Part No :

NVMFS6H836NLWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 16A/77A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 89W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
NVMFS6H836NLWFT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NVMFS6H836NLWFT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMFS6H836NLWFT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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