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56-CBSA-2.0X6.0X0.5

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RF SHIELD 2" X 6" THROUGH HOLE

NTP360N80S3Z

NTP360N80S3Z

MOSFET N-CH 800V 13A TO220-3

NTP360N80S3Z

NTP360N80S3Z

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Part No :

NTP360N80S3Z

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 13A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
78011200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:SuperFET® III
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.8V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:25.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1143 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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