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G3R30MT12K

G3R30MT12K

SIC MOSFET N-CH 90A TO247-4

G3R30MT12K

G3R30MT12K

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Part No :

G3R30MT12K

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 90A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:36mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:2.69V @ 12mA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:3901 pF @ 800 V
FET Feature:-
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
G3R30MT12K is available at GangBo-ic.com, Please review product page below for detailed information, including G3R30MT12K price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for G3R30MT12K to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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