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GA50JT06-258

GA50JT06-258

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Part No :

GA50JT06-258

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 600V 100A TO258
Catalog
Transistors - FETs, MOSFETs - Single
Availability
075607 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
PDF
GA50JT06-258 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:25mOhm @ 50A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):769W (Tc)
Operating Temperature:-55°C ~ 225°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-258
Package / Case:TO-258-3, TO-258AA
GA50JT06-258 is available at GangBo-ic.com, Please review product page below for detailed information, including GA50JT06-258 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for GA50JT06-258 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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