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IPB039N10N3GE8197ATMA1

IPB039N10N3GE8197ATMA1

N-CHANNEL POWER MOSFET

IPB039N10N3GE8197ATMA1

IPB039N10N3GE8197ATMA1

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Part No :

IPB039N10N3GE8197ATMA1

Manufacturer
Rochester Electronics
Description
N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
785578 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 31 - Nov 04 2025
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IPB039N10N3GE8197ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB039N10N3GE8197ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB039N10N3GE8197ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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