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NTH4L080N120SC1

NTH4L080N120SC1

TRANS SJT N-CH 1200V 29A TO247-4

NTH4L080N120SC1

NTH4L080N120SC1

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Part No :

NTH4L080N120SC1

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS SJT N-CH 1200V 29A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10416 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
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