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BSM300C12P3E301

BSM300C12P3E301

SICFET N-CH 1200V 300A MODULE

BSM300C12P3E301

BSM300C12P3E301

Image is for reference, please contact us to get the real picture

Part No :

BSM300C12P3E301

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1200V 300A MODULE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
835483 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 80mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 10 V
FET Feature:Standard
Power Dissipation (Max):1360W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Supplier Device Package:Module
Package / Case:Module
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