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IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-7

IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

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Part No :

IPBE65R190CFD7AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 14A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
605460 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1291 pF @ 400 V
FET Feature:-
Power Dissipation (Max):77W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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