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IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-7

IPBE65R190CFD7AATMA1

IPBE65R190CFD7AATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPBE65R190CFD7AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 14A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
605460 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 25 - Oct 29 2025
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1291 pF @ 400 V
FET Feature:-
Power Dissipation (Max):77W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IPBE65R190CFD7AATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPBE65R190CFD7AATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPBE65R190CFD7AATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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