MOSFET N-CH 950V 3.5A IPAK
M50X1.5 HP CORD GRIP EMI/RFI
DC DC CONVERTER 52V 200W
Type | Description |
---|---|
Series: | MDmesh™ K5 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 950 V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.5 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 220 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 70W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
TK3R2A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
![]() |
AOD294AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 55A TO252 |
![]() |
2SK1095-90-ERochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NVH4L020N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 102A TO247 |
![]() |
AOW296Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 100V 70A TO262 |
![]() |
NVH4L040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 58A TO247-4 |
![]() |
IRF351Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IXTH20N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 20A TO247 |
![]() |
APTM50SKM19GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 163A SP6 |
![]() |
SIR820DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
![]() |
MTD6N10E1Rochester Electronics |
NFET DPAK 100V 0.40R |
![]() |
IXTY48P05T-TRLWickmann / Littelfuse |
MOSFET P-CH 50V 48A TO252 |
![]() |
NDS9400Rochester Electronics |
P-CHANNEL POWER MOSFET |