Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHG125N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO247AC |
|
JDX5005Rochester Electronics |
NFET T0220FP JPN |
|
TK3R2E06PL,S1XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
FS30AS-2-T13#B00Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
TK49N65W,S1FToshiba Electronic Devices and Storage Corporation |
PB-F POWER MOSFET TRANSISTOR TO2 |
|
NTD360N80S3ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 13A DPAK |
|
STD3N65M6STMicroelectronics |
MOSFET N-CH 650V DPAK |
|
SQJQ142E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 460A PPAK 8 X 8 |
|
NTMFS6H801NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 24A/160A 5DFN |
|
NP100N04PUK-E1-AYRochester Electronics |
N-CHANNEL MOSFET |
|
NVMFS020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A/28A 5DFN |
|
5HP02NRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
2SK1591-T2B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |