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NTTFS3D7N06HLTWG

NTTFS3D7N06HLTWG

MOSFET N-CH 60V 16A/103A 8PQFN

NTTFS3D7N06HLTWG

NTTFS3D7N06HLTWG

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Part No :

NTTFS3D7N06HLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 16A/103A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
375237 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:32.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2383 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3)
Package / Case:8-PowerWDFN
NTTFS3D7N06HLTWG is available at GangBo-ic.com, Please review product page below for detailed information, including NTTFS3D7N06HLTWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTTFS3D7N06HLTWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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