MOSFET P-CH 20V 89A POWERDI3333
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 89A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 4mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 125 nC @ 10 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4670 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK4R1A10PL,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
DMP2021UTSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V TSSOP-8 T&R |
|
BSS84AKW-B115Rochester Electronics |
P-CHANNEL MOSFET |
|
IRF626Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMT10H009LCG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 12.4A/47A 8DFN |
|
FDMS86101ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.4A/60A 8PQFN |
|
RJK5012DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF9531Rochester Electronics |
MOSFET P-CH 60V 12A TO220AB |
|
NTMYS2D1N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 258A |
|
2SK2111-T2-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMP45H4D9HJ3Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 4.6A TO251 |
|
STWA70N60DM2STMicroelectronics |
MOSFET N-CHANNEL 600V 66A TO247 |
|
DMTH6006LPSW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 17.2A/100A PWRDI |