MOSFET N-CH 60V 17A/71A 5DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 71A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 53µA |
Gate Charge (Qg) (Max) @ Vgs: | 14.4 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1035 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 3.6W (Ta), 61W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STMFS5C628NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V |
|
TK380A65Y,S4XToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
IAUT165N08S5N029ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 165A 8HSOF |
|
SIRA60DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
RFP2N12Rochester Electronics |
N-CHANNEL, MOSFET |
|
NTTFS2D8N04HLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/104A 8WDFN |
|
SI3453DV-T1-GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 3.4A 6TSOP |
|
APTM100DAM90GRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 78A SP6 |
|
BB504CDS-TL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
DMN2025U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V SOT23 T&R 3 |
|
PMPB08R4VPXNexperia |
MOSFET P-CH 12V 12A DFN2020M-6 |
|
SSM6K517NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 6A 6UDFNB |
|
SIHF068N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 16A TO220 |