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IPW65R110CFD7XKSA1

IPW65R110CFD7XKSA1

HIGH POWER_NEW

IPW65R110CFD7XKSA1

IPW65R110CFD7XKSA1

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Part No :

IPW65R110CFD7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
HIGH POWER_NEW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
914991 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:CoolMOS™ CFD7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1942 pF @ 400 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW65R110CFD7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R110CFD7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R110CFD7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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