MOSFET N-CH 850V 8A TO3P
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 850 V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 654 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TP65H035G4WSTransphorm |
GANFET N-CH 650V 46.5A TO247-3 |
|
YJQ3622A-F1-1100HF |
N-CH MOSFET 30V 30A DFN3333-8L |
|
UPA2747UT1A-E1-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
ON5441518Rochester Electronics |
NOW NEXPERIA ON5441 - RF MOSFET |
|
IXFA36N55X2Wickmann / Littelfuse |
IXFA36N55X2 |
|
PMPB16R5XNEXNexperia |
PMPB16R5XNE - 30 V, N-CHANNEL TR |
|
RV4E031RPHZGTCR1ROHM Semiconductor |
MOSFET P-CH 30V 3.1A DFN1616-6W |
|
YJL3407A-F2-0000HF |
P-CH MOSFET 30V 4.1A SOT-23-3L |
|
HUF76132S3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMP31D7LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT323 |
|
IXFL80N50Q2Wickmann / Littelfuse |
MOSFET N-CH 500V 55A ISOPLUS264 |
|
3SK295ZQ-TL-ERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMN63D1LT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 320MA SOT523 |