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NVMJS1D6N06CLTWG

NVMJS1D6N06CLTWG

MOSFET N-CH 60V 38A/250A 8LFPAK

NVMJS1D6N06CLTWG

NVMJS1D6N06CLTWG

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Part No :

NVMJS1D6N06CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 38A/250A 8LFPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
044904 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-LFPAK
Package / Case:8-PowerSMD, Gull Wing
NVMJS1D6N06CLTWG is available at GangBo-ic.com, Please review product page below for detailed information, including NVMJS1D6N06CLTWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVMJS1D6N06CLTWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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