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RFB18N10CS

RFB18N10CS

MOSFET N-CH 100V 18A TO220AB-5

RFB18N10CS

RFB18N10CS

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Part No :

RFB18N10CS

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 18A TO220AB-5
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11876 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:Current Sensing
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB-5
Package / Case:TO-220-5
RFB18N10CS is available at GangBo-ic.com, Please review product page below for detailed information, including RFB18N10CS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RFB18N10CS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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