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TPN7R006PL,L1Q

TPN7R006PL,L1Q

MOSFET N-CH 60V 54A 8TSON

TPN7R006PL,L1Q

TPN7R006PL,L1Q

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Part No :

TPN7R006PL,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 54A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18681 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1875 pF @ 30 V
FET Feature:-
Power Dissipation (Max):630mW (Ta), 75W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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