RES 27 OHM 1% 1/2W 1210
DC DC CONVERTER +/-5V 3.5W
MOSFET N-CH 300V 88A TO268
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300 V |
Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 180 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6300 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 600W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STL17N60M6STMicroelectronics |
MOSFET N-CH 600V 10A PWRFLAT HV |
|
DMP2010UFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 50A POWERDI3333 |
|
NTMFS034N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 6.1A/31A 8PQFN |
|
SIHB15N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 13A D2PAK |
|
APTM20UM04SAGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 417A SP6 |
|
IRFD311Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMNH4005SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 80A PWRDI5060-8 |
|
SQD100N04_3M6T4GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
SIRA90DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
|
2SK3305B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APTM120UM70DAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 171A SP6 |
|
RQJ0304DQDQSWS#H3Rochester Electronics |
P CH MOS FET POWER SWITCHING |
|
FL6L52030LPanasonic |
MOSFET P-CH 20V 1A WSSMINI6-F1 |