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NTMFS0D8N02P1ET1G

NTMFS0D8N02P1ET1G

MOSFET N-CH 25V 55A/365A 5DFN

NTMFS0D8N02P1ET1G

NTMFS0D8N02P1ET1G

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Part No :

NTMFS0D8N02P1ET1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 25V 55A/365A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14904500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta), 365A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:680µOhm @ 46A, 10V
Vgs(th) (Max) @ Id:2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 4.5 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:8600 pF @ 13 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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