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SI8819EDB-T2-E1

SI8819EDB-T2-E1

MOSFET P-CH 12V 2.9A 4MICRO FOOT

SI8819EDB-T2-E1

SI8819EDB-T2-E1

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Part No :

SI8819EDB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 2.9A 4MICRO FOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14060 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
PDF
SI8819EDB-T2-E1 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 3.7V
Rds On (Max) @ Id, Vgs:80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 6 V
FET Feature:-
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
Package / Case:4-XFBGA
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