MOSFET N-CH 55V 80A TO220-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.5mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 125µA |
Gate Charge (Qg) (Max) @ Vgs: | 105 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2620 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 190W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
MTM232230LBFPanasonic |
MOSFET N CH 20V 4.5A SMINI3-G1-B |
![]() |
STB25NM50NSTMicroelectronics |
MOSFET N-CH 500V 22A D2PAK |
![]() |
IRF7523D1IR (Infineon Technologies) |
MOSFET N-CH 30V 2.7A MICRO8 |
![]() |
FQA8N80C_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8.4A TO3P |
![]() |
FDD6N50FTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5.5A DPAK |
![]() |
FDC642P-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A TSOT23-6 |
![]() |
IXTC200N10TWickmann / Littelfuse |
MOSFET N-CH 100V 101A ISOPLUS220 |
![]() |
NTMYS6D2N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4LFPAK |
![]() |
DMN7022LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 75V 23A POWERDI3333 |
![]() |
BUK6218-40C,118-NEXRochester Electronics |
PFET, 42A I(D), 40V, 0.028OHM, 1 |
![]() |
STD5N65M6STMicroelectronics |
MOSFET N-CH 650V DPAK |
![]() |
NVMFS5C628NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
![]() |
RJK0348DPA-01#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |