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IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1

MOSFET N-CH 150V 130A TO263-7

IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1

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Part No :

IPB065N15N3GE8187ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 130A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
098109 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
IPB065N15N3GE8187ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7300 pF @ 75 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPB065N15N3GE8187ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB065N15N3GE8187ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB065N15N3GE8187ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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