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2SK3565(Q,M)

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2SK3565(Q,M)

2SK3565(Q,M)

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Part No :

2SK3565(Q,M)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 900V 5A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
648064 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
2SK3565(Q,M) PDF
Type Description
Series:π-MOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
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