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FDN5618P_G

FDN5618P_G

MOSFET P-CH 60V 1.25A SUPERSOT3

FDN5618P_G

FDN5618P_G

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Part No :

FDN5618P_G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 1.25A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
428042 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 26 - Aug 30 2025
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 30 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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