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SSM6J53FE(TE85L,F)

SSM6J53FE(TE85L,F)

MOSFET P-CH 20V 1.8A ES6

SSM6J53FE(TE85L,F)

SSM6J53FE(TE85L,F)

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Part No :

SSM6J53FE(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 20V 1.8A ES6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
707970 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
SSM6J53FE(TE85L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 2.5V
Rds On (Max) @ Id, Vgs:136mOhm @ 1A, 2.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10.6 nC @ 4 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:568 pF @ 10 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ES6 (1.6x1.6)
Package / Case:SOT-563, SOT-666
SSM6J53FE(TE85L,F) is available at GangBo-ic.com, Please review product page below for detailed information, including SSM6J53FE(TE85L,F) price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SSM6J53FE(TE85L,F) to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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