MOSFET N-CH 650V 8.5A IPAK
Type | Description |
---|---|
Series: | MDmesh™ V |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 430mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 900 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 70W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BUK662R4-40C,118Nexperia |
MOSFET N-CH 40V 120A D2PAK |
![]() |
AOT440LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V TO220 |
![]() |
IXFC60N20Wickmann / Littelfuse |
MOSFET N-CH 200V 60A ISOPLUS220 |
![]() |
NVTFS5826NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.6A 8WDFN |
![]() |
STQ3NK50ZR-APSTMicroelectronics |
MOSFET N-CH 500V 500MA TO92-3 |
![]() |
IRF6718L2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 61A DIRECTFET |
![]() |
IRF7702TRIR (Infineon Technologies) |
MOSFET P-CH 12V 8A 8TSSOP |
![]() |
AOT10N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 600V 10A TO220 |
![]() |
2SK3539G0LPanasonic |
MOSFET N-CH 50V 100MA SMINI3-F2 |
![]() |
IPI90N06S4L04AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO262-3 |
![]() |
SIE832DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 50A 10POLARPAK |
![]() |
IXTA74N15TWickmann / Littelfuse |
MOSFET N-CH 150V 74A TO263 |
![]() |
FQI2NA90TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 2.8A I2PAK |