MOSFET N-CH 500V 38A SOT-227
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 130mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 420 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6900 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 500W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227 |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR12N25DCTRLPIR (Infineon Technologies) |
MOSFET N-CH 250V 14A DPAK |
|
IRFR9024Vishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
SUM40N10-30-E3Vishay / Siliconix |
MOSFET N-CH 100V 40A TO263 |
|
94-2386IR (Infineon Technologies) |
MOSFET N-CH 55V 49A D2PAK |
|
FQP58N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 57.5A TO220-3 |
|
SI3456CDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 7.7A 6TSOP |
|
IRF7413ATRIR (Infineon Technologies) |
MOSFET N-CH 30V 12A 8SO |
|
IXTQ62N25TWickmann / Littelfuse |
MOSFET N-CH 250V 62A TO3P |
|
BSC106N025S GIR (Infineon Technologies) |
MOSFET N-CH 25V 13A/30A TDSON |
|
5LP01M-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 0.07A 3MCP |
|
STB60NE06L-16T4STMicroelectronics |
MOSFET N-CH 60V 60A D2PAK |
|
IPU20N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO251-3 |
|
AON6590_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 67A/100A 8DFN |